View 2sa1127 e datasheet:

Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SC2634 5.0± 0.2 4.0± 0.2 Features Low noise characteristics. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO –60 V 0.45 –0.1 0.45 –0.1 Collector to emitter voltage VCEO –55 V 1.27 1.27 Emitter to base voltage VEBO –7 V Peak collector current ICP –200 mA 1 2 3 1:Emitter Collector current IC –100 mA 2:Collector 3:Base Collector power dissipation PC 400 mW 2.54± 0.15 JEDEC:TO–92 Junction temperature Tj 150 ?C EIAJ:SC–43A Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit I