View 2sa1162 datasheet:

2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage and high current: VCEO = -50 V, IC = -150 mA (max) • Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) • High hFE: hFE = 70~400 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC2712 • Small package Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Base current IB -30 mA JEDEC TO-236MOD Collector power dissipation PC 150 mW JEITA SC-59 Junction temperature Tj 125 °C TOSHIBA 2-3F1A Storage temperature range