View 2sa1163 datasheet:

2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = -120 V • Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC2713 • Small package Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Base current IB -20 mA JEDEC TO-236MOD Collector power dissipation PC 150 mW JEITA SC-59 Junction temperature Tj 125 °C TOSHIBA 2-3F1A Storage temperature range Tstg -55~125 °C Weight: 0.012 g