View 2sa1182 datasheet:

2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C • Complementary to 2SC2859. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA Base current IB -50 mA Collector power dissipation PC 150 mW JEDEC TO-236MOD Junction temperature Tj 125 °C JEITA SC-59 Storage temperature range Tstg -55~125 °C TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics S