View 2sa1200 datasheet:

2SA1200 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 High Voltage Switching Applications Unit: mm • High voltage: VCEO = -150 V • High transition frequency: f = 120 MHz (typ.) T • Small flat package • P = 1 to 2 W (mounted on ceramic substrate) C • Complementary to 2SC2880 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -150 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Collector current IC -50 mA Base current IB -10 mA PC 500 PW-MINI Collector power dissipation mW JEDEC ? PC 800 (Note 1) JEITA SC-62 Junction temperature Tj 150 °C TOSHIBA 2-5K1A Storage temperature range Tstg -55 to 150 °C Weight: 0.05 g (typ.) Note 1: 2SA1200 mounted on ceramic s