All Transistors. Datasheet

 

View 2sa1201 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sa1201

2SA1201 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Unit: mm Power Amplifier Applications • High voltage: VCEO = -120 V • High transition frequency: f = 120 MHz (typ.) T • Small flat package • P C = 1 to 2 W (mounted on ceramic substrate) • Complementary to 2SC2881 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Base current IB -160 mA PW-MINI PC 500 JEDEC ? Collector power dissipation mW PC JEITA SC-62 1000 (Note 1) TOSHIBA 2-5K1A Junction temperature Tj 150 °C Weight: 0.05 g (typ.) Storage temperature range Tstg -55 to 150 °C Note 1: M

Keywords

 2sa1201 Datasheet, Design, MOSFET, Power

 2sa1201 RoHS, Compliant, Service, Triacs, Semiconductor

 2sa1201 Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.