View 2sa1202 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SA1202 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1202 Power Amplifier Applications Unit: mm Voltage Amplifier Applications • Suitable for driver of 30 to 35 watts audio amplifier • Small flat package • P = 1.0 to 2.0 W (mounted on ceramic substrate) C • Complementary to 2SC2882 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -400 mA Base current IB -80 mA PC 500 PW-MINI Collector power dissipation mW PC JEDEC ? 1000 (Note 1) JEITA SC-62 Junction temperature Tj 150 °C TOSHIBA 2-5K1A Storage temperature range Tstg -55 to 150 °C Weight: 0.05 g (typ.) Note 1: Mounted on ceramic substrate
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2sa1202 Datasheet, Design, MOSFET, Power
2sa1202 RoHS, Compliant, Service, Triacs, Semiconductor
2sa1202 Database, Innovation, IC, Electricity
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