All Transistors. Datasheet

 

View 2sa1203 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sa1203

2SA1203 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1203 Audio Frequency Amplifier Applications Unit: mm • Suitable for output stage of 3 watts amplifier • Small flat package • P = 1.0 to 2.0 W (mounted on ceramic substrate) C • Complementary to 2SC2883 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -1.5 A Base current IB -0.3 A PC 500 Collector power dissipation mW PC PW-MINI 1000 (Note 1) JEDEC ? Junction temperature Tj 150 °C JEITA SC-62 Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-5K1A Note 1: Mounted on ceramic substrate (250 mm2 ? 0.8 t) Weight: 0.05 g (typ.) 1 2002-08

Keywords

 2sa1203 Datasheet, Design, MOSFET, Power

 2sa1203 RoHS, Compliant, Service, Triacs, Semiconductor

 2sa1203 Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.