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2sa1204

2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1204 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SC2884 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Base current IB -160 mA PC 500 PW-MINI Collector power dissipation mW PC JEDEC ? 1000 (Note 1) JEITA SC-62 Junction temperature Tj 150 °C TOSHIBA 2-5K1A Storage temperature range Tstg -55 to 150 °C Weight: 0.05 g (typ.) Note 1: Mounted on ceram

Keywords

 2sa1204 Datasheet, Design, MOSFET, Power

 2sa1204 RoHS, Compliant, Service, Triacs, Semiconductor

 2sa1204 Database, Innovation, IC, Electricity

 

 
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