View 2sa1204 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1204 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SC2884 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Base current IB -160 mA PC 500 PW-MINI Collector power dissipation mW PC JEDEC ? 1000 (Note 1) JEITA SC-62 Junction temperature Tj 150 °C TOSHIBA 2-5K1A Storage temperature range Tstg -55 to 150 °C Weight: 0.05 g (typ.) Note 1: Mounted on ceram
Keywords
2sa1204 Datasheet, Design, MOSFET, Power
2sa1204 RoHS, Compliant, Service, Triacs, Semiconductor
2sa1204 Database, Innovation, IC, Electricity
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet