View 2sa1207 datasheet:

Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions · Adoption of FBET process. unit:mm · High breakdown voltage. 2003B · Excellent linearity of hFE and small Cob. [2SA1207/2SC2909] · Fast switching speed. 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 : Emitter 2 : Collector ( ) : 2SA1207 3 : Base 1.3 1.3 SANYO : NP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)180 V Collector-to-Emitter Voltage VCEO (–)160 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)70 mA Collector Current (Pulse) ICP (–)140 mA Collector Dissipation PC 600 mW Junction Temperature