View 2sa1208 datasheet:

Ordering number:ENN781G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications Features Package Dimensions · Adoption of FBET process. unit:mm · High breakdown voltage. 2006B · Excellent linearity of hFE and small Cob. [2SA1208/2SC2910] · Fast swtching speed. 6.0 5.0 4.7 0.5 0.6 0.5 0.5 1 2 3 1 : Emitter ( ) : 2SA1208 2 : Collector 3 : Base Specifications 1.45 1.45 SANYO : MP Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)180 V Collector-to-Emitter Voltage VCEO (–)160 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)70 mA Collector Current (Pulse) ICP (–)140 mA Collector Dissipation PC 900 mW Junction Temper