View 2sa1209 datasheet:

Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions · Adoption of FBET process. unit:mm · High breakdown voltage. 2009B · Good linearity of hFE and small Cob. [2SA1209/2SC2911] · Fast switching speed. 8.0 2.7 4.0 3.0 1.6 0.8 0.8 0.6 0.5 1 2 3 1 : Emitter 2 : Collector ( ) : 2SA1209 2.4 3 : Base 4.8 SANYO : TO-126 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)180 V Collector-to-Emitter Voltage VCEO (–)160 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)140 mA Collector Current (Pulse) ICP (–)200 mA 1 W Collector Dissipation PC