View 2sa1213 datasheet:

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit: mm Power Switching Applications � Low saturation voltage: VCE (sat) = -0.5 V (max) (I C = -1 A) � High speed switching time: t = 1.0 �s (typ.) stg � Small flat package � PC = 1.0 to 2.0 W (mounted on ceramic substrate) � Complementary to 2SC2873 Maximum Ratings (Ta = 25�C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -2 A PW-MINI Base current IB -0.4 A JEDEC ? PC 500 Collector power dissipation mW JEITA SC-62 PC 1000 (Note 1) TOSHIBA 2-5K1A Junction temperature Tj 150 �C Weight: 0.05 g (typ.) Storage temperature range T