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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sa1225

2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -160 V Emitter-base voltage VEBO -5 V Collector current IC -1.5 A Base current IB -0.3 A Ta = 25°C 1.0 Collector power PC W dissipation Tc = 25°C 15 Junction temperature Tj 150 °C JEDEC ? Storage temperature range Tstg -55 to 150 °C JEITA ? TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ? JEITA ? TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2002-07-23 2SA1225 Electrical Characteristics (Ta = 25°

Keywords

 2sa1225 Datasheet, Design, MOSFET, Power

 2sa1225 RoHS, Compliant, Service, Triacs, Semiconductor

 2sa1225 Database, Innovation, IC, Electricity

 

 
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