View 2sa1242 datasheet:

2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications • Excellent hFE linearity : h = 100 to 320 (V = -2 V, I = -0.5 A) FE (1) CE C : h = 70 (min) (V = -2 V, I = -4 A) FE (2) CE C • Low collector saturation voltage : V = -1.0 V (max) (I = -4 A, I = -0.1 A) CE (sat) C B • High power dissipation : P = 10 W (Tc = 25°C), P = 1.0 W (Ta = 25°C) C C Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -8 V DC IC -5 JEDEC ? Collector current A Pulsed JEITA ? ICP -8 (Note 1) TOSHIBA 2-7B1A Base current IB -0.5 A Weight: 0.36 g (typ.) Ta = 25°C 1.0