View 2sa1244 datasheet:

2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1244 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = -0.4 V (max) (I = -3 A) C • High speed switching time: t = 1.0 µs (typ.) stg • Complementary to 2SC3074 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -5 A Base current IB -1 A Ta = 25°C 1.0 Collector power PC W dissipation Tc = 25°C 20 Junction temperature Tj 150 °C JEDEC ? Storage temperature range Tstg -55 to 150 °C JEITA ? TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ? JEITA ? TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2002-07-23 2SA1