View 2sa1245 datasheet:

2SA1245 TOSHIBA Transistor Silicon PNP Epitaxial Planar Type 2SA1245 High Frequency Amplifier and Switching Applications Unit: mm VHF~UHF Band Low Noise Amplifier Applications Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -8 V Emitter-base voltage VEBO -2 V Collector current IC -30 mA Base current IB -15 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC ? JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Microwave Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = -5 V, IC = -10 mA ? 4 ? GHz ?S21e?2 (1) VCE = -5 V, IC = -10 mA,