View 2sa1246 datasheet:

Ordering number:ENN1047C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features Package Dimensions · High VEBO. unit:mm · Wide ASO and highly resistant to breakdown. 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 : Emitter 2 : Collector ( ) : 2SA1246 3 : Base 1.3 1.3 SANYO : NP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)60 V Collector-to-Emitter Voltage VCEO (–)50 V Emitter-to-Base Voltage VEBO (–)15 V Collector Current IC (–)150 mA Collector Current (Pulse) ICP (–)300 mA Collector Dissipation PC 400 mW Junction Temperature Tj 150 ?C ?C Storage Temperature Tstg –55 to +150 Electrical Characteristics at Ta = 25