View 2sa1252 datasheet:

Ordering number:ENN1048C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 High VEBO, AF Amp Applications Features Package Dimensions · High VEBO. unit:mm · Wide ASO and high durability against breakdown. 2018B [2SA1252/2SC3134] 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 2.9 1 : Base 2 : Emitter ( ) : 2SA1252 3 : Collector SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)60 V Collector-to-Emitter Voltage VCEO (–)50 V Emitter-to-Base Voltage VEBO (–)15 V Collector Current IC (–)150 mA Collector Current (Pulse) ICP (–)300 mA Collector Dissipation PC 200 mW Junction Temperature Tj 125 ?C Storage Temperature Tstg –55 to +125 ?C Electrical Characteristics at Ta = 25?