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View 2sa1254 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sa1254_e

Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SC2206 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25?C) 0.55± 0.1 0.45± 0.05 Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V 3 2 1 Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V 2.5 2.5 Peak collector current ICP –60 mA Collector current IC –30 mA 1:Base 2:Collector EIAJ:SC–71 Collector power dissipation PC 400 mW 3:Emitter M Type Mold Package Junction temperature T

Keywords

 2sa1254 e Datasheet, Design, MOSFET, Power

 2sa1254 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sa1254 e Database, Innovation, IC, Electricity

 

 
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