View 2sa1256 datasheet:

Ordering number:EN1056C PNP Epitaxial Planar Silicon Transistors 2SA1256 High Frequency Amp Applications Applications Package Dimensions · Ideally suited for use in FM RF amplifiers, mixers, unit:mm oscillators, converters, and IF amplifiers. 2018B [2SA1256] Features · High fT (230MHz typ), and small Cre (1.1pF typ). · Small NF (2.5dB typ). 1 : Base 2 : Emitter 3 : Collector SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –30 V Collector-to-Emitter Voltage VCEO –20 V Emitter-to-Base Voltage VEBO –5 V Collector Current IC –30 mA Collector Dissipation PC 150 W Junction Temperature Tj 125 ?C Storage Temperature Tstg –55 to +125 ?C Electrical Characteristics at Ta = 25?C Rati