View 2sa1296 datasheet:

2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Unit: mm Power Switching Applications • Low saturation voltage: VCE (sat) = -0.5 V (max) @I = -2 A C • Complementary to 2SC3266. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -2 A Base current IB -0.5 A Collector power dissipation PC 750 mW Junction temperature Tj 150 °C JEDEC TO-92 Storage temperature range Tstg -55~150 °C JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO