View 2sa1297 datasheet:

2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1297 Power Amplifier Applications Unit: mm Power Switching Applications • Low saturation voltage: VCE (sat) = -0.5 V (max) @I = -2 A C • Complementary to 2SC3267. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO 6 V Collector current IC -2 A Base current IB -0.5 A Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C JEDEC ? JEITA ? TOSHIBA 2-4E1A Weight: 0.13 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB =