View 2sa1415 datasheet:

Ordering number:EN1720A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1415/2SC3645 High-Voltage Switching, Predriver Applications Features Package Dimensions · Adoption of FBET process. unit:mm · High breakdown voltage (VCEO=160V). 2038 · Excellent linearity of hFE and small Cob. [2SA1415/2SC3645] · Fast switching speed. · Very small size marking it easy to provide high- density, small-sized hybrid ICs. E : Emitter C : Collector B : Base ( ) : 2SA1415 SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)180 V Collector-to-Emitter Voltage VCEO (–)160 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)140 mA Collector Current (Pulse) ICP (–)200 mA