View 2sa1433 datasheet:

Ordering number:EN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features Package Dimensions · High fT (Gain-Bandwidth Product). unit:mm · Small reverse transfer capacitance (Cre=1.3pF). 2006A · Adoption of FBET process. [2SA1433] EIAJ : SC-51 B : Base SANYO : MP C :Collector E : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –70 V Collector-to-Emitter Voltage VCEO –60 V Emitter-to-Base Voltage VEBO –4 V Collector Current IC –50 mA Collector Current (Pulse) ICP –100 mA Collector Dissipation PC 900 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter S