View 2sa1435 datasheet:

Ordering number:ENN1856A PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions · Low frequency general-purpose amplifiers, drivers, unit:mm muting circuits. 2003B [2SA1435] Features 5.0 4.0 4.0 · Adoption of MBIT process. · High DC current gain (hFE=500 to 1200). · Large current capacity. · Low colletor-to-emitter saturation voltage 0.45 0.5 (VCE(sat)? 0.5V max). 0.44 0.45 · High VEBO (VEBO? 15V). 1 2 3 1 : Emitter 2 : Collector 3 : Base Specifications 1.3 1.3 SANYO : NP Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –30 V Collector-to-Emitter Voltage VCEO –25 V Emitter-to-Base Voltage VEBO –15 V Collector Current IC –300 mA C