View 2sa1436 datasheet:

Ordering number:ENN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications Package Dimensions · AF amplifier, various drivers, muting circuit. unit:mm 2003B Features [2SA1436] · Adoption of MBIT process. 5.0 4.0 4.0 · High DC current gain (hFE=500 to 1200). · Large current capacity. · Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). 0.45 0.5 · High VEBO (VEBO? 15V). 0.44 0.45 1 2 3 1 : Emitter 2 : Collector 3 : Base Specifications SANYO : NP 1.3 1.3 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –60 V Collector-to-Emitter Voltage VCEO –50 V Emitter-to-Base Voltage VEBO –15 V Collector Current IC –200 mA Collector Current (Pul