View 2sa1832ft datasheet:

2SA1832FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1832FT Audio frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = -50 V • High current: I = -150 mA (max) C • High h : h = 120 to 400 FE FE • Excellent h linearity FE : h (I = -0.1 mA)/h (I = -2 mA) = 0.95 (typ.) FE C FE C • Complementary to 2SC4738F Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Base current IB -30 mW JEDEC ? Collector power dissipation PC 100 mW JEITA ? Junction temperature Tj 125 °C TOSHIBA 2-1B1A Storage temperature range Tstg -55 to 125 °C Marking Type Name hFE Rank