View 2sa1873 datasheet:

2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1873 Audio Frequency General Purpose Amplifier Applications Unit: mm • Small package (dual type) • High voltage and high current: V = -50 V, I = -150 mA (max) CEO C • High h FE • Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) • Complementary to 2SC4944 Maximum Ratings (Ta = = 25°C) (Q1, Q2 common) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -150 mA Base current IB -30 mA PC JEDEC ? Collector power dissipation 200 mW (Note) JEITA ? Junction temperature Tj 125 °C TOSHIBA 2-2L1A Storage temperature range Tstg -55~125 °C Weight: 6.2