View 2sa2005 datasheet:

2SA2005 Transistors High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (-160V, -1.5A) 2SA2005 Features External dimensions (Units : mm) 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = -160V) 10.0 4.5 3) High fT. (Typ. 150MHz) 3.2 2.8 ? 4) Wide SOA (safe operating area). 5) Complements the 2SC5511. 1.2 1.3 0.8 0.75 2.54 2.54 2.6 (1) Base(Gate) (1) (2) (3) (2) Collector(Drain) Absolute maximum ratings (Ta = 25�C) (1) (2) (3) (3) Emitter(Source) Parameter Symbol Limits Unit ROHM : TO-220FN Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -160 V Emitter-base voltage VEBO -5 V Collector current IC -1.5 A 2 W Collector power dissipation PC 20 W (Tc = 25�C) Junction temper