View 2sa2007 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SA2007 Transistors High-speed Switching Transistor (-60V,-12A) 2SA2007 External dimensions (Units : mm) Features 1) High switching speed. 10.0 4.5 (Typ. tf = 0.15µs at Ic = -6A) 3.2 2.8 ? 2) Low saturation voltage. (Typ. VCE(sat) = -0.2V at IC / IB = -6A / -0.3A) 3) Wide SOA. (safe operating area) 1.2 1.3 4) Complements the 2SC5526. 0.8 ( ) (1) Base Gate 0.75 2.54 2.54 2.6 (1) (2) (3) (2) Collector(Drain) ( ) (1) (2) (3) (3) Emitter Source ROHM : TO-220FN Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -100 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -5 V -12 A Collector current IC -20 A(Pulse) 2 W PC Collectorpowerdissipation 25 W(Tc=25°C) Junction temperature Tj 150 °C Storage
Keywords
2sa2007 Datasheet, Design, MOSFET, Power
2sa2007 RoHS, Compliant, Service, Triacs, Semiconductor
2sa2007 Database, Innovation, IC, Electricity
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