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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sa2017

2SA2017 Transistors Power Transistor (-80V, -4A) 2SA2017 Features 1) Low VCE(sat). (Typ. –0.3V at IC/IB = -2 / -0.2A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SC5574. Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V -4 A Collector current IC -6 A(Pulse) Collector power dissipation PC 30 W(Tc = 25°C) Junction temperature Tj 150 °C Storage temperature Tstg -55~+150 °C Packaging specifications and hFE Type 2SA2017 Package TO-220FN hFE E Code - Basic ordering unit (pieces) 500 Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Conditions

Keywords

 2sa2017 Datasheet, Design, MOSFET, Power

 2sa2017 RoHS, Compliant, Service, Triacs, Semiconductor

 2sa2017 Database, Innovation, IC, Electricity

 

 
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