View 2sa2056 datasheet:

2SA2056 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 200 to 500 (I = -0.5 A) C • Low collector-emitter saturation voltage: V = -0.2 V (max) CE (sat) • High-speed switching: t = 90 ns (typ.) f Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -7 V DC IC -2.0 Collector current A Pulse ICP -3.5 Base current IB -200 mA JEDEC TO-92 t = 10 s PC 1000 Collector power mW JEITA ? dissipation (Note 1) DC 625 TOSHIBA 2-3S1A Junction temperature Tj 150 °C Weight: 0.01 g (typ.) Storage temperature range Tstg -55 t