View 2sa2058 datasheet:

2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 200 to 500 (I = -0.2 A) C • Low collector-emitter saturation voltage: V = -0.19 V (max) CE (sat) • High-speed switching: t = 25 ns (typ.) f Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -10 V Emitter-base voltage VEBO -7 V DC IC -1.5 Collector current A Pulse ICP -2.5 Base current IB -150 mA JEDEC ? DC PC 500 Collector power JEITA ? mW dissipation (Note) t = 10 s 750 TOSHIBA 2-3S1A Junction temperature Tj 150 °C Weight: 0.01 g (typ.) Storage temperature range Tstg