View 2sa2059 datasheet:

2SA2059 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2059 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 200 to 500 (I = -0.5 A) C • Low collector-emitter saturation voltage: V = -0.19 V (max) CE (sat) • High-speed switching: t = 40 ns (typ.) f Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -7 V DC IC -3.0 Collector current A Pulse ICP -5.0 Base current IB -300 mA JEDEC ? DC PC 1.0 Collector power W dissipation JEITA SC-62 (Note) t = 10 s 2.5 TOSHIBA 2-5K1A Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C Weight: 0.05 g (t