View 2sa2060 datasheet:

2SA2060 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2060 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications � High DC current gain: hFE = 200 to 500 (I = -0.5 A) C � Low collector-emitter saturation voltage: V = -0.2 V (max) CE (sat) � High-speed switching: t = 90 ns (typ.) f Maximum Ratings (Ta = 25�C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -7 V DC IC -2.0 Collector current A Pulse ICP -3.5 Base current IB -200 mA JEDEC ? t = 10 s PC 2.5 Collector power W dissipation JEITA SC-62 (Note 1) DC 1.0 TOSHIBA 2-5K1A Junction temperature Tj 150 �C Storage temperature range Tstg -55 to 150 �C Weight: 0.05 g