View 2sa2061 datasheet:

2SA2061 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2061 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 200 to 500 (I = 0.5 A) C • Low collector-emitter saturation voltage: V = -0.19 V (max) CE (sat) • High-speed switching: t = 40 ns (typ.) f Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -7 V DC IC -2.5 Collector current A Pulse ICP -4.0 Base current IB -250 mA JEDEC ? t = 10 s PC 1000 Collector power JEITA ? mW dissipation (Note) DC 625 TOSHIBA 2-3S1A Junction temperature Tj 150 °C Weight: 0.01 g (typ.) Storage temperature range Tstg -55 to 1