View 2sa2065 datasheet:

2SA2065 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2065 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 200 to 500 (I = -0.15 A) C • Low collector-emitter saturation voltage: V = -0.14 V (max) CE (sat) • High-speed switching: t = 37 ns (typ.) f Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -7 V DC IC -1.5 Collector current A Pulse ICP -2.5 Base current IB -150 mA JEDEC ? t = 10 s PC 750 Collector power mW JEITA ? dissipation (Note 1) DC 500 TOSHIBA 2-3S1A Junction temperature Tj 150 °C Weight: 0.01 g (typ.) Storage temperature range Tstg -55 to