View 2sa2069 datasheet:

2SA2069 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2069 High-Speed Switching Applications Unit: mm DC-DC Converter Applications • High DC current gain: hFE = 200 to 500 (I = -0.15 A) C • Low collector-emitter saturation voltage: V = -0.14 V (max) CE (sat) • High-speed switching: t = 37 ns (typ.) f Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -7 V DC IC -1.5 Collector current A Pulse ICP -2.5 Base current IB -150 mA t = 10 s PC 2.0 Collector power W dissipation JEDEC ? (Note 1) DC 1.0 JEITA SC-62 Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 1: M