View 2sa2070 datasheet:

2SA2070 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching Applications Unit: mm DC-DC Converter Applications • High DC current gain: hFE = 200 to 500 (I = -0.1 A) C • Low collector-emitter saturation voltage: V = -0.20 V (max) CE (sat) • High-speed switching: t = 70 ns (typ.) f Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -7 V DC IC -1.0 Collector current A Pulse ICP -2.0 Base current IB -0.1 A DC 1.0 Collector power PC (Note) W JEDEC ? dissipation t = 10 s 2.0 JEITA SC-62 Junction temperature Tj 150 °C TOSHIBA 2-5K1A Storage temperature range Tstg -55 to 150 °C Weight: 0.05 g (typ.) Note: Mounted on