View 2sa2097 datasheet:

2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications Unit: mm DC-DC Converter Applications � High DC current gain: h = 200 to 500 (I = -0.5 A) FE C � Low collector-emitter saturation: V = -0.27 V (max) CE (sat) � High-speed switching: t = 55 ns (typ.) f Maximum Ratings (Ta = 25�C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -7 V DC IC -5 Collector current A Pulse ICP -10 Base current IB -0.5 A JEDEC ? Ta = 25�C 1 Collector power Pc W dissipation JEITA SC-64 Tc = 25�C 20 Junction temperature Tj 150 �C TOSHIBA 2-7J1A Storage temperature range Tstg -55 to 150 �C Weight: 0.36 g (typ.) Electrical Characteristics (T