View 2sa562tm datasheet:

2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA562TM Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C • 1 watt amplifier application. • Complementary to 2SC1959. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -500 mA JEDEC TO-92 Base current IB -100 mA JEITA SC-43 Collector power dissipation PC 500 mW TOSHIBA 2-5F1B Junction temperature Tj 150 °C Weight: 0.21 g (typ.) Storage temperature range Tstg -55~150 °C Electrical Characteristics (T