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2sa608n

Ordering number:ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · Capable of being used in the low frequency to high unit:mm frequency range. 2164 [2SA608N/2SC536N] 4.5 Features 3.7 3.5 · Large current capacity and wide ASO. 0.45 0.5 1.27 0.45 0.44 1 2 3 1 : Emitter 2.5 2.5 2 : Collector ( ) : 2SA608N 3 : Base SANYO : NPA-WA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–50)60 V Collector-to-Emitter Voltage VCEO (–)50 V Emitter-to-Base Voltage VEBO (–)6 V Collector Current IC (–)150 mA Collector Current (Pulse) ICP (–)400 mA Collector Dissipation PC 500 mW Junction Temper

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 2sa608n Datasheet, Design, MOSFET, Power

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