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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sa720a_e

Transistor 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Unit: mm Complementary to 2SC1318A 5.0± 0.2 4.0± 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO –80 V 0.45 –0.1 0.45 –0.1 Collector to emitter voltage VCEO –70 V 1.27 1.27 Emitter to base voltage VEBO –5 V Peak collector current ICP –1 A 1 2 3 1:Emitter Collector current IC – 0.5 A 2:Collector 3:Base Collector power dissipation PC 625 mW 2.54± 0.15 JEDEC:TO–92 Junction temperature Tj 150 ?C EIAJ:SC–43A Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Pa

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 2sa720a e Datasheet, Design, MOSFET, Power

 2sa720a e RoHS, Compliant, Service, Triacs, Semiconductor

 2sa720a e Database, Innovation, IC, Electricity

 

 
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