View 2sa777 e datasheet:

Transistor 2SA777 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit: mm Complementary to 2SC1509 5.9± 0.2 4.9± 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7± 0.1 2.54± 0.15 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO –80 V +0.2 +0.2 Emitter to base voltage VEBO –5 V 0.45–0.1 0.45–0.1 1.27 1.27 Peak collector current ICP –1 A 1:Emitter Collector current IC – 0.5 A 2:Collector 1 2 3 3:Base Collector power dissipation PC 750 mW EIAJ:SC–51 Junction temperature Tj 150 ?C TO–92L Package Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25