View 2sa879 e datasheet:

Transistor 2SA879 Silicon PNP epitaxial planer type For general amplification Unit: mm Complementary to 2SC1573 5.9± 0.2 4.9± 0.2 Features High collector to emitter voltage VCEO. 0.7± 0.1 Absolute Maximum Ratings (Ta=25?C) 2.54± 0.15 Parameter Symbol Ratings Unit Collector to base voltage VCBO –250 V Collector to emitter voltage VCEO –200 V Emitter to base voltage VEBO –5 V +0.2 +0.2 0.45–0.1 0.45–0.1 Peak collector current ICP –100 mA 1.27 1.27 Collector current IC –70 mA 1:Emitter Collector power dissipation PC 1 W 2:Collector 1 2 3 3:Base Junction temperature Tj 150 ?C EIAJ:SC–51 TO–92L Package Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –12V, I