View 2sa921 e datasheet:

Transistor 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit: mm Complementary to 2SC1980 5.0± 0.2 4.0± 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V +0.2 +0.2 Collector to emitter voltage VCEO –120 V 0.45 –0.1 0.45 –0.1 1.27 1.27 Emitter to base voltage VEBO –5 V Peak collector current ICP –50 mA Collector current IC –20 mA 1 2 3 1:Emitter Collector power dissipation PC 250 mW 2:Collector 3:Base 2.54± 0.15 Junction temperature Tj 150 ?C JEDEC:TO–92 Storage temperature Tstg –55 ~ +150 ?C EIAJ:SC–43A Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO