View 2sa950 datasheet:

2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA950 Audio Power Amplifier Applications Unit: mm • High hFE: h = 100~320 FE • 1 W output applications • Complementary to 2SC2120 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current IC -800 mA Base current IB -160 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -35 V, IE = 0 ? ? -0.1 µA