All Transistors. Datasheet

 

View 2sa970 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sa970

2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA970 Low Noise Audio Amplifier Applications Unit: mm • Low noise: NF = 3dB (typ.) RG = 100 ?, V = -6 V, I = -100 µA, CE C f = 1 kHz : NF = 0.5dB (typ.) R = 1 k?, V = -6 V, I = -100 µA, G CE C f = 1 kHz • High DC current gain: h = 200~700 FE • High breakdown voltage: V = -120 V CEO • Low pulse noise. Low 1/f noise Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA JEDEC TO-92 Base current IB -20 mA JEITA SC-43 Collector power dissipation PC 300 mW Junction temperature Tj 125 °C TOSHIBA 2-5F1B Storage temperature range Tstg -55~1

Keywords

 2sa970 Datasheet, Design, MOSFET, Power

 2sa970 RoHS, Compliant, Service, Triacs, Semiconductor

 2sa970 Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.