View 2sb1184 datasheet:

2SB1184 / 2SB1243 Transistors Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features External dimensions (Units : mm) 1) Low VCE(sat). 2SB1184 2SB1243 VCE(sat) = -0.5V (Typ.) 2.5±0.2 6.8±0.2 2.3 +0.2 6.5±0.2 -0.1 (IC/IB = -2A / -0.2A) C0.5 5.1 +0.2 -0.1 0.5±0.1 2) Complements the 2SD1760 / 2SD1864. 0.65Max. 0.65±0.1 0.75 0.9 0.55±0.1 0.5±0.1 Structure 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) (3) Epitaxial planar type 2.54 2.54 1.05 0.45±0.1 (1) (2) (3) PNP silicon transistor (1) Base (1) Emitter ROHM : CPT3 (2) Collector ROHM : ATV (2) Collector EIAJ : SC-63 (3) Emitter (3) Base Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V IC -3